Effects of Interface Roughness Scattering on Radio Frequency Performance of Silicon Nanowire Transistors

Theoretical Investigation of Surface Roughness Scattering in Silicon Nanowire Transistors

Analysis of Low Frequency Drain Current Model for Silicon Nanowire Gate-All-Around Field Effect Transistor

This paper is investigated the low frequency noise behavior in subthreshold regime of gate-all-around silicon nanowire field effect transistors. Downscaling of multi gate structure beyond 50 nm gate length describes the quantum confinement related model. A drain current model has been described for output characteristics of silicon nanowire FET that is incorporated with velocity saturation effe...

Performance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor

In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...

Surface roughness exacerbated performance degradation in silicon nanowire transistors

Scaling of silicon devices is fast approaching the limit where a single gate will fail to retain an effective control over the channel region. Of the alternative devices being researched, silicon nanowire transistors SNWTs show great promise in terms of scalability, performance, and ease of fabrication. In this work, the authors present the results of self-consistent, three-dimensional fully qu...

Effect of elastic processes and ballistic recovery in silicon nanowire transistors

Scaling of silicon devices is fast approaching the limit where a single gate may fail to retain effective control over the channel region. Of the alternative device structures under focus, silicon nanowire transistors (SNWT) show great promise in terms of scalability, performance, and ease of fabrication. Here we present the results of self-consistent, fully 3D quantum mechanical simulations of...